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CGD65A130S2-T13
manufacturer:
Cambridge GaN Devices
Description:
650V GAN HEMT, 130MOHM, DFN8X8.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
2.3 NC @ 12 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
ICeGaN™
Vgs (Max):
+20V, -1V
Vgs(th) (Max) @ Id:
4.2V @ 4.2mA
Supplier Device Package:
16-DFN (8x8)
Rds On (Max) @ Id, Vgs:
182mOhm @ 900mA, 12V
Mfr:
Cambridge GaN Devices
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
-
Drive Voltage (Max Rds On, Min Rds On):
12V
Package / Case:
16-PowerVDFN
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
GaNFET (Gallium Nitride)
FET Feature:
Current Sensing
Model Number:
CGD65A130S2-T13
Introduction
650 V 12A (Tc) Surface Mount 16-DFN (8x8)
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