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IPTC011N08NM5ATMA1
manufacturer:
Infineon Technologies
Description:
OPTIMOS 5 POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
223 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
17000 PF @ 40 V
Series:
OptiMOS™ 5
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.8V @ 280µA
Supplier Device Package:
PG-HDSOP-16-2
Rds On (Max) @ Id, Vgs:
1.1mOhm @ 150A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
3.8W (Ta), 375W (Tc)
Package / Case:
16-PowerSOP Module
Drain To Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
42A (Ta), 408A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IPTC011N08NM5ATMA1
Introduction
N-Channel 80 V 42A (Ta), 408A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HDSOP-16-2
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