VP3203N3-G
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds:
300 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Package:
Bag
Supplier Device Package:
TO-92-3
Rds On (Max) @ Id, Vgs:
600mOhm @ 3A, 10V
Mfr:
Microchip Technology
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
740mW (Ta)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
650mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
VP3203
Model Number:
VP3203N3-G
Introduction
P-Channel 30 V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3
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