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GAN041-650WSBQ
manufacturer:
Nexperia USA Inc.
Description:
GAN041-650WSB/SOT429/TO-247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
22 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1500 PF @ 400 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Supplier Device Package:
TO-247-3
Rds On (Max) @ Id, Vgs:
41mOhm @ 32A, 10V
Mfr:
Nexperia USA Inc.
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
187W
Package / Case:
TO-247-3
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
47.2A
Technology:
GaNFET (Cascode Gallium Nitride FET)
FET Feature:
-
Model Number:
GAN041-650WSBQ
Introduction
N-Channel 650 V 47.2A 187W Through Hole TO-247-3
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