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IPAN50R500CEXKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 500V 11.1A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 200µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
18.7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
500mOhm @ 2.3A, 13V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
13V
Package:
Tube
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
433 PF @ 100 V
Mounting Type:
Through Hole
Series:
CoolMOS™
Supplier Device Package:
PG-TO220-FP
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
11.1A (Tc)
Power Dissipation (Max):
28W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPAN50
Model Number:
IPAN50R500CEXKSA1
Introduction
N-Channel 500 V 11.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
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