IRF9Z24PBF-BE3
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
P-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
19 NC @ 10 V
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
280mOhm @ 6.6A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
570 PF @ 25 V
Drain To Source Voltage (Vdss):
60 V
Power Dissipation (Max):
60W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF9Z24
Model Number:
IRF9Z24PBF-BE3
Introduction
P-Channel 60 V 11A (Tc) 60W (Tc) Through Hole TO-220AB
Send RFQ
Stock:
MOQ:

