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IRFB3307PBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 75V 130A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 150µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
180 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.3mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5150 PF @ 50 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220AB
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
130A (Tc)
Power Dissipation (Max):
200W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFB3307
Model Number:
IRFB3307PBF
Introduction
N-Channel 75 V 130A (Tc) 200W (Tc) Through Hole TO-220AB
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