IPA105N15N3GXKSA1
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 160µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
55 NC @ 10 V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 37A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4300 PF @ 75 V
Mounting Type:
Through Hole
Series:
OptiMOS™
Supplier Device Package:
PG-TO220-FP
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Power Dissipation (Max):
40.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPA105
Model Number:
IPA105N15N3GXKSA1
Introduction
N-Channel 150 V 37A (Tc) 40.5W (Tc) Through Hole PG-TO220-FP
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