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CSD25304W1015T
manufacturer:
Texas Instruments
Description:
MOSFET P-CH 20V 3A 6DSBGA
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.15V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFBGA, DSBGA
Gate Charge (Qg) (Max) @ Vgs:
4.4 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
32.5mOhm @ 1.5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
595 PF @ 10 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-DSBGA (1x1.5)
Mfr:
Texas Instruments
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Power Dissipation (Max):
750mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25304W1015
Model Number:
CSD25304W1015T
Introduction
P-Channel 20 V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
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