IRF9510SPBF
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
8.7 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
200 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Mfr:
Vishay Siliconix
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2.4A, 10V
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
43W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF9510
Model Number:
IRF9510SPBF
Introduction
P-Channel 100 V 4A (Tc) 43W (Tc) Surface Mount
Send RFQ
Stock:
MOQ:

