english
CSD13302WT
manufacturer:
Texas Instruments
Description:
MOSFET N-CH 12V 1.6A 4DSBGA
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-UFBGA, DSBGA
Gate Charge (Qg) (Max) @ Vgs:
7.8 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
17.1mOhm @ 1A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
12 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
862 PF @ 6 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
4-DSBGA (1x1)
Mfr:
Texas Instruments
Current - Continuous Drain (Id) @ 25°C:
1.6A (Ta)
Power Dissipation (Max):
1.8W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD13302
Model Number:
CSD13302WT
Introduction
N-Channel 12 V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)
Send RFQ
Stock:
MOQ: