HAT2201WP-EL-E
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Vgs(th) (Max) @ Id:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 10 V
Supplier Device Package:
8-WPAK
Rds On (Max) @ Id, Vgs:
43mOhm @ 7.5A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1450 PF @ 10 V
Drain To Source Voltage (Vdss):
100 V
Package / Case:
8-PowerWDFN
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
HAT2201WP-EL-E
Introduction
N-Channel 100 V 15A (Ta) Surface Mount 8-WPAK
Send RFQ
Stock:
MOQ:

