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IPA65R1K5CEXKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 5.2A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 130µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
10.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
225 PF @ 100 V
Mounting Type:
Through Hole
Series:
CoolMOS™
Supplier Device Package:
PG-TO220-FP
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPA65R1
Model Number:
IPA65R1K5CEXKSA1
Introduction
N-Channel 650 V 5.2A (Tc) 30W (Tc) Through Hole PG-TO220-FP
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