english
TK3R3E08QM,S1X
manufacturer:
Toshiba Semiconductor and Storage
Description:
UMOS10 TO-220AB 80V 3.3MOHM
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
110 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
7670 PF @ 40 V
Series:
U-MOSX-H
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 1.3mA
Supplier Device Package:
TO-220
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 50A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
175°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
230W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
TK3R3E08QM,S1X
Introduction
N-Channel 80 V 120A (Tc) 230W (Tc) Through Hole TO-220
Send RFQ
Stock:
MOQ: