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N0412N-S19-AY
manufacturer:
Renesas Electronics America Inc
Description:
MOSFET N-CH 40V 100A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
100 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5550 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Mfr:
Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Power Dissipation (Max):
1.5W (Ta), 119W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
N0412N-S19
Model Number:
N0412N-S19-AY
Introduction
N-Channel 40 V 100A (Ta) 1.5W (Ta), 119W (Tc) Through Hole TO-220
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