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IPP019N06NF2SAKMA1
manufacturer:
Infineon Technologies
Description:
TRENCH 40<-<100V PG-TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
162 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
7300 PF @ 30 V
Series:
StrongIRFET™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.3V @ 129µA
Supplier Device Package:
PG-TO220-3-U05
Rds On (Max) @ Id, Vgs:
1.9mOhm @ 100A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
3.8W (Ta), 188W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
33A (Ta), 185A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IPP019N06NF2SAKMA1
Introduction
N-Channel 60 V 33A (Ta), 185A (Tc) 3.8W (Ta), 188W (Tc) Through Hole PG-TO220-3-U05
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