english
SIHP6N80E-BE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 800V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
44 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
827 PF @ 100 V
Series:
E
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
940mOhm @ 3A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
78W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
5.4A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SIHP6N80E-BE3
Introduction
N-Channel 800 V 5.4A (Tc) 78W (Tc) Through Hole TO-220AB
Send RFQ
Stock:
MOQ: