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2SK3700(F)
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 900V 5A TO3P
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Vgs(th) (Max) @ Id:
4V @ 1mA
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
28 NC @ 10 V
Supplier Device Package:
TO-3P(N)
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 3A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1150 PF @ 25 V
Drain To Source Voltage (Vdss):
900 V
Power Dissipation (Max):
150W (Tc)
Package / Case:
TO-3P-3, SC-65-3
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2SK3700
Model Number:
2SK3700(F)
Introduction
N-Channel 900 V 5A (Ta) 150W (Tc) Through Hole TO-3P(N)
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