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R6009ENXC7G
manufacturer:
Rohm Semiconductor
Description:
600V 9A TO-220FM, LOW-NOISE POWE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
23 NC @ 10 V
Rds On (Max) @ Id, Vgs:
535mOhm @ 2.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
430 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FM
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Power Dissipation (Max):
48W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6009
Model Number:
R6009ENXC7G
Introduction
N-Channel 600 V 9A (Ta) 48W (Tc) Through Hole TO-220FM
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