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IMZA65R083M1HXKSA1
manufacturer:
Infineon Technologies
Description:
SILICON CARBIDE MOSFET, PG-TO247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
19 NC @ 18 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
624 PF @ 400 V
Series:
CoolSiC™
Vgs (Max):
+20V, -2V
Vgs(th) (Max) @ Id:
5.7V @ 3.3mA
Supplier Device Package:
PG-TO247-4-3
Rds On (Max) @ Id, Vgs:
111mOhm @ 11.2A, 18V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Power Dissipation (Max):
104W (Tc)
Package / Case:
TO-247-4
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Model Number:
IMZA65R083M1HXKSA1
Introduction
N-Channel 650 V 26A (Tc) 104W (Tc) Through Hole PG-TO247-4-3
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