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DF17MR12W1M1HFB68BPSA1
manufacturer:
Infineon Technologies
Description:
LOW POWER EASY
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.15V @ 20mA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
Module
Gate Charge (Qg) (Max) @ Vgs:
149 NC @ 18 V
Rds On (Max) @ Id, Vgs:
16.2mOhm @ 50A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tray
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+20V, -7V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4400 PF @ 800 V
Mounting Type:
Chassis Mount
Series:
EasyPACK™
Supplier Device Package:
-
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
45A (Tj)
Power Dissipation (Max):
20mW
Technology:
SiC (Silicon Carbide Junction Transistor)
Base Product Number:
DF17MR12
Model Number:
DF17MR12W1M1HFB68BPSA1
Introduction
N-Channel 1200 V 45A (Tj) 20mW Chassis Mount
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