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MSCSM120DAM31CTBL1NG
manufacturer:
Microchip Technology
Description:
PM-MOSFET-SIC-SBD-BL1
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
Module
Gate Charge (Qg) (Max) @ Vgs:
232 NC @ 20 V
Rds On (Max) @ Id, Vgs:
31mOhm @ 40A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Bulk
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3020 PF @ 1000 V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
-
Mfr:
Microchip Technology
Current - Continuous Drain (Id) @ 25°C:
79A
Power Dissipation (Max):
310W
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
MSCSM120
Model Number:
MSCSM120DAM31CTBL1NG
Introduction
N-Channel 1200 V 79A 310W Chassis Mount
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