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DMN2011UTS-13
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 20V 21A 8TSSOP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Gate Charge (Qg) (Max) @ Vgs:
56 NC @ 10 V
Rds On (Max) @ Id, Vgs:
11mOhm @ 7A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2248 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-TSSOP
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Power Dissipation (Max):
1.3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN2011
Model Number:
DMN2011UTS-13
Introduction
N-Channel 20 V 21A (Tc) 1.3W (Ta) Surface Mount 8-TSSOP
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