NTD4815N-35G
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Gate Charge (Qg) (Max) @ Vgs:
14.1 NC @ 11.5 V
Rds On (Max) @ Id, Vgs:
15mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 11.5V
Package:
Tube
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
770 PF @ 12 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I-Pak
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
6.9A (Ta), 35A (Tc)
Power Dissipation (Max):
1.26W (Ta), 32.6W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTD4815
Model Number:
NTD4815N-35G
Introduction
N-Channel 30 V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Through Hole I-Pak
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