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SI3459BDV-T1-BE3
manufacturer:
Vishay Siliconix
Description:
P-CHANNEL 60-V (D-S) MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
350 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
6-TSOP
Rds On (Max) @ Id, Vgs:
216mOhm @ 2.2A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2W (Ta), 3.3W (Tc)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta), 2.9A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SI3459BDV-T1-BE3
Introduction
P-Channel 60 V 2.2A (Ta), 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
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