IRFSL7762PBF
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
130 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
4440 PF @ 25 V
Series:
HEXFET®, StrongIRFET™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.7V @ 100µA
Supplier Device Package:
TO-262
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 51A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
140W (Tc)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Drain To Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IRFSL7762PBF
Introduction
N-Channel 75 V 85A (Tc) 140W (Tc) Through Hole TO-262
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