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R8002KND3TL1
manufacturer:
Rohm Semiconductor
Description:
HIGH-SPEED SWITCHING NCH 800V 1.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 150µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
7.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.2Ohm @ 800mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
140 PF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252GE
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
1.6A (Ta)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R8002
Model Number:
R8002KND3TL1
Introduction
N-Channel 800 V 1.6A (Ta) 30W (Tc) Surface Mount TO-252GE
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