STH160N4LF6-2
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
181 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 60A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
8130 PF @ 20 V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
H2Pak-2
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH160
Model Number:
STH160N4LF6-2
Introduction
N-Channel 40 V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2
Send RFQ
Stock:
MOQ:

