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STP1N105K3
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 1050V 1.4A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
13 NC @ 10 V
Rds On (Max) @ Id, Vgs:
11Ohm @ 600mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
1050 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
180 PF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMESH3™
Supplier Device Package:
TO-220
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
1.4A (Tc)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP1N
Model Number:
STP1N105K3
Introduction
N-Channel 1050 V 1.4A (Tc) 60W (Tc) Through Hole TO-220
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