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PSMN102-200Y,115
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 200V 21.5A LFPAK56
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
30.7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
102mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1568 PF @ 30 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
21.5A (Tc)
Power Dissipation (Max):
113W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN102
Model Number:
PSMN102-200Y,115
Introduction
N-Channel 200 V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8
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