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SI4490DY-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 2.85A 8SO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
42 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 250µA (Min)
Supplier Device Package:
8-SOIC
Rds On (Max) @ Id, Vgs:
80mOhm @ 4A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
1.56W (Ta)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
2.85A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4490
Model Number:
SI4490DY-T1-GE3
Introduction
N-Channel 200 V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
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