STI45N10F7
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Rds On (Max) @ Id, Vgs:
18mOhm @ 22.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1640 PF @ 50 V
Mounting Type:
Through Hole
Series:
DeepGATE™, STripFET™ VII
Supplier Device Package:
I2PAK (TO-262)
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STI45N
Model Number:
STI45N10F7
Introduction
N-Channel 100 V 45A (Tc) 60W (Tc) Through Hole I2PAK (TO-262)
Send RFQ
Stock:
MOQ:

