STD7NM80-1
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
18 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.05Ohm @ 3.25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
620 PF @ 25 V
Mounting Type:
Through Hole
Series:
MDmesh™
Supplier Device Package:
TO-251 (IPAK)
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
Power Dissipation (Max):
90W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD7
Model Number:
STD7NM80-1
Introduction
N-Channel 800 V 6.5A (Tc) 90W (Tc) Through Hole TO-251 (IPAK)
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