VP2206N3-G-P003
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds:
450 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Supplier Device Package:
TO-92-3
Rds On (Max) @ Id, Vgs:
900mOhm @ 3.5A, 10V
Mfr:
Microchip Technology
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Power Dissipation (Max):
740mW (Tc)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
640mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
VP2206
Model Number:
VP2206N3-G-P003
Introduction
P-Channel 60 V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3
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