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TK1R4F04PB,LXGQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 40V 160A TO220SM
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 500µA
Operating Temperature:
175°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
103 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.9mOhm @ 80A, 6V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5500 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
TO-220SM(W)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
160A (Ta)
Power Dissipation (Max):
205W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK1R4F04
Model Number:
TK1R4F04PB,LXGQ
Introduction
N-Channel 40 V 160A (Ta) 205W (Tc) Surface Mount TO-220SM(W)
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