english
FQI7N80TU
manufacturer:
onsemi
Description:
MOSFET N-CH 800V 6.6A I2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
52 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 3.3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1850 PF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I2PAK (TO-262)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
6.6A (Tc)
Power Dissipation (Max):
3.13W (Ta), 167W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQI7N80
Model Number:
FQI7N80TU
Introduction
N-Channel 800 V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Through Hole I2PAK (TO-262)
Send RFQ
Stock:
MOQ: