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SIDR626DP-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 60V 42.8A/100A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
102 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5130 PF @ 30 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8DC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
42.8A (Ta), 100A (Tc)
Power Dissipation (Max):
6.25W (Ta), 125W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIDR626
Model Number:
SIDR626DP-T1-GE3
Introduction
N-Channel 60 V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
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