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RJK60S7DPK-M0#T0
manufacturer:
Renesas Electronics America Inc
Description:
MOSFET N-CH 600V 30A TO3PSG
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
39 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
2300 PF @ 25 V
Series:
-
Vgs (Max):
+30V, -20V
Vgs(th) (Max) @ Id:
-
Supplier Device Package:
TO-3PSG
Rds On (Max) @ Id, Vgs:
125mOhm @ 15A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
227.2W (Tc)
Package / Case:
TO-3P-3, SC-65-3
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
RJK60S7DPK-M0#T0
Introduction
N-Channel 600 V 30A (Tc) 227.2W (Tc) Through Hole TO-3PSG
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