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R6524KNX3C16
manufacturer:
Rohm Semiconductor
Description:
650V 24A, TO-220AB, HIGH-SPEED S
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 750µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
45 NC @ 10 V
Rds On (Max) @ Id, Vgs:
185mOhm @ 11.3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1850 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Power Dissipation (Max):
253W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6524
Model Number:
R6524KNX3C16
Introduction
N-Channel 650 V 24A (Tc) 253W (Tc) Through Hole TO-220AB
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