english
ISP12DP06NMXTSA1
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 60V 2.8A SOT223-4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 520µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
20.2 NC @ 10 V
Rds On (Max) @ Id, Vgs:
125mOhm @ 2.8A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
790 PF @ 30 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-SOT223-4
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
2.8A (Ta)
Power Dissipation (Max):
1.8W (Ta), 4.2W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISP12DP06
Model Number:
ISP12DP06NMXTSA1
Introduction
P-Channel 60 V 2.8A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
Send RFQ
Stock:
MOQ: