IRFH5215TRPBF
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-VQFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
32 NC @ 10 V
Rds On (Max) @ Id, Vgs:
58mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1350 PF @ 50 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
PQFN (5x6)
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
5A (Ta), 27A (Tc)
Power Dissipation (Max):
3.6W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFH5215
Model Number:
IRFH5215TRPBF
Introduction
N-Channel 150 V 5A (Ta), 27A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount PQFN (5x6)
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