IRFH5104TR2PBF
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
80 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
3120 PF @ 25 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 100µA
Supplier Device Package:
PQFN (5x6)
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 50A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
3.6W (Ta), 114W (Tc)
Package / Case:
8-VQFN Exposed Pad
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 100A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IRFH5104TR2PBF
Introduction
N-Channel 40 V 24A (Ta), 100A (Tc) 3.6W (Ta), 114W (Tc) Surface Mount PQFN (5x6)
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