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IPB19DP10NMATMA1
manufacturer:
Infineon Technologies
Description:
TRENCH >=100V PG-TO263-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1.04mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
45 NC @ 10 V
Rds On (Max) @ Id, Vgs:
185mOhm @ 12A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2000 PF @ 50 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TO263-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
2.9A (Ta), 13.8A (Tc)
Power Dissipation (Max):
3.8W (Ta), 83W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB19D
Model Number:
IPB19DP10NMATMA1
Introduction
P-Channel 100 V 2.9A (Ta), 13.8A (Tc) 3.8W (Ta), 83W (Tc) Surface Mount PG-TO263-3
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