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IRFH5020TRPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 5.1A 8PQFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 150µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
54 NC @ 10 V
Rds On (Max) @ Id, Vgs:
55mOhm @ 7.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2290 PF @ 100 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
5.1A (Ta)
Power Dissipation (Max):
3.6W (Ta), 8.3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFH5020
Model Number:
IRFH5020TRPBF
Introduction
N-Channel 200 V 5.1A (Ta) 3.6W (Ta), 8.3W (Tc) Surface Mount 8-PQFN (5x6)
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