GSFU6522
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
70 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
2100 PF @ 100 V
Series:
-
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-220F
Rds On (Max) @ Id, Vgs:
190mOhm @ 10A, 10V
Mfr:
Good-Ark Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
45W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
GSFU6522
Introduction
N-Channel 650 V 20A (Tc) 45W (Tc) Through Hole TO-220F
Send RFQ
Stock:
MOQ:

