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BSZ900N20NS3GATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 15.2A 8TSDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 30µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
11.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
90mOhm @ 7.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
920 PF @ 100 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TSDSON-8
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
15.2A (Tc)
Power Dissipation (Max):
62.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSZ900
Model Number:
BSZ900N20NS3GATMA1
Introduction
N-Channel 200 V 15.2A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8
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