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TSM900N06CW RPG
manufacturer:
Taiwan Semiconductor Corporation
Description:
MOSFET N-CHANNEL 60V 11A SOT223
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
9.3 NC @ 10 V
Rds On (Max) @ Id, Vgs:
90mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
500 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223
Mfr:
Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Power Dissipation (Max):
4.17W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TSM900
Model Number:
TSM900N06CW RPG
Introduction
N-Channel 60 V 11A (Tc) 4.17W (Tc) Surface Mount SOT-223
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