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SI4463CDY-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 20V 13.6A/49A 8SO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
162 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 13A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4250 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
13.6A (Ta), 49A (Tc)
Power Dissipation (Max):
2.7W (Ta), 5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4463
Model Number:
SI4463CDY-T1-GE3
Introduction
P-Channel 20 V 13.6A (Ta), 49A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SOIC
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