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BSC12DN20NS3GATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 11.3A 8TDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 25µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
8.7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
125mOhm @ 5.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
680 PF @ 100 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TDSON-8-5
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
11.3A (Tc)
Power Dissipation (Max):
50W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSC12DN20
Model Number:
BSC12DN20NS3GATMA1
Introduction
N-Channel 200 V 11.3A (Tc) 50W (Tc) Surface Mount PG-TDSON-8-5
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