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SI7820DN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 1.7A PPAK1212-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
18 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
240mOhm @ 2.6A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
1.5W (Ta)
Package / Case:
PowerPAK® 1212-8
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
1.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI7820
Model Number:
SI7820DN-T1-GE3
Introduction
N-Channel 200 V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
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